dgr;hyphen;doped AlGaAs and AlGaAs/InGaAs high electron mobility transistor structures grown by metalorganic chemical vapor deposition

摘要

We have successfully grown dgr;hyphen;doped AlGaAs structures and dgr;hyphen;doped AlGaAs/InGaAs pseudomorphic high electron mobility transistor (HEMT) structures by atmospheric pressure metalorganic chemical vapor deposition (MOCVD). Capacitancehyphen;voltage (Chyphen;V) profiles with fullhyphen;width at halfhyphen;maximum as small as 32 Aring; demonstrate very narrow doping profiles of dgr;hyphen;doped AlGaAs layers grown at 650ndash;700thinsp;deg;C. TheoreticalChyphen;Vprofiles of dgr;hyphen;doped AlGaAs have been selfhyphen;consistently calculated with theLvalley taken into account and compared with the experimental results. A dgr;hyphen;doped AlGaAs/InGaAs pseudomorphic HEMT structure with a 30 Aring; spacer layer yields a sheet carrier concentration of 2.25times;1012cmminus;2with an electron mobility of 20thinsp;300 cm2/Vthinsp;s at 77 K.