beta-Ga2O3 nanostructured materials have been obtained on Si(111) substrates by annealing the Ga2O3/V films at different temperatures. X-ray diffraction (XRD), scanning electron microscope (SEM), high-resolution transmission electron microscope (HRTEM) and photoluminescence (PL) spectrum were used to analyze the structure, morphology and optical properties of beta-Ga2O3 nanostructured films. These properties were investigated particularly as a function of annealing temperature. Our results indicate that the beta-Ga2O3 nanorods annealed at 950 degrees C have the best morphology and crystallinity. These nanorods are pure monoclinic Ga2O3 structures with lengths of about 5 mu m and diameters of about 180 rim, which is conducive to the application of nanodevices. Finally, the growth mechanism is also discussed briefly.
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