Pulsed electron beam irradiation of ionhyphen;implanted copper single crystals

摘要

The effect of an intense, pulsed electron beam on highhyphen;dose implanted Cu single crystals has been studied. Rutherford backscattering and channeling have been used to obtain the depth concentration profiles and lattice locations of the implanted species (Au, Ag, and Ta) before and after pulsed electron beam irradiation. Channeling and secondary electron microscopy measurements show that the Cu surface melts during pulsed irradiation followed by an epitaxial lattice growth resulting in (i) a redistribution of the implanted species, (ii) some species (e.g., Au and Ag) remaining on lattice sites, and (iii) Ta leaving substitutional sites.