Investigation of the mean free path of hot electrons in GaAs-AlGaAs heterostructures

摘要

The mean free path of hot electrons in GaAs/AlGaAs heterostructures is investigated. For the first time grating-induced Smith-Purcell emission is studied as a function of the grating period length. The mean free path is obtained from the changes in intensity and width of the experimental spectra by performing a Fourier analysis of the effective interaction potential. In the direction of the applied electric field a mean free path of lambda approximately 300 nm is obtained, whereas perpendicular to the electric field the mean free path is smaller ( lambda approximately=150 nm).