Study of lateral direction growth of carbon nano tube

摘要

We proposed metal catalyst structure to achieve a lateral direction growth of Carbon Nano Tube (CNT). Growth conditions of CNT by chemical vapor deposition (CVD) such as flow rate of source gases and temperature, were investigated. Single CNT across two electrodes was obtained with higher growth temperature and small gas flow. From electrical characterization of CNT, P-type semiconductor like behavior of CNT was observed. Resistance of CNT become higher in lower temperature.