Background doping dependence of silicon diffusion inphyphen;type GaAs

摘要

Junction depth measurements via scanning electron microscopy and secondary ion mass spectroscopy are used to characterize silicon diffusion in GaAs crystals that contain varying amounts of zinc background doping. The zinc concentration is found to control the silicon diffusion process. A reason for this is suggested based on the shift in Fermi level with increasedphyphen;type doping. Also, the electric field due to thephyphen;njunction formed at the silicon diffusion front is shown to have a large effect on the zinc background doping profile.