Experimental evidence of both interstitialhyphen; and vacancyhyphen;assisted diffusion of Ge in Si

摘要

We present the first experimental identification of the diffusion mechanisms of Ge in Si. Using thermal nitridation reactions to create either excess selfhyphen;interstitials or vacancies, it is established that under equilibrium conditions at 1050thinsp;deg;C Ge diffusion takes place by both substitutionalhyphen;interstitial interchange and vacancy mechanisms, with comparable contributions from each. If previous conjectures that Ge diffusion in Si is similar to Si selfhyphen;diffusion are correct, our findings support the idea that Si selfhyphen;diffusion takes place by both interstitial and vacancy mechanisms.