A molecular dynamics investigation into the mechanisms of material removal and subsurface damage of nanoscale high speed laser-assisted machining

摘要

Molecular dynamics is employed to study the mechanism of material removal and subsurface damage of monocrystalline silicon when it is under a nanoscale high-speed laser-assisted grinding of a diamond tip. Laser-assisted machining (LAM) is that the workpiece is locally heated by an intense laser beam before material removal. The effects of laser moving speed, laser pulse intensity and laser spot radius are thoroughly investigated in terms of atomic trajectories, phase transformation, temperature distribution, grinding temperature, grinding force and friction coefficient. The investigation shows that a higher laser moving speed reduces the subsurface damage and improves the material remove rate because of fewer atoms with five and six coordination atoms and more chips. Besides, both tangential grinding force (Fx) and normal grinding force (Fy) decrease as the laser moving speed increases. The distribution of high-temperature zone strongly depends upon the effect of laser pulse intensity and laser spot radius. Larger laser pulse intensity can make the material more fully softened before being removed. Moreover, as the laser pulse intensity becomes larger, the friction coefficients became smaller, the material remove rate improves and the depth of grinding increases. However, larger laser pulse intensity may result in a larger thermal deformation of workpiece. A larger laser spot radius reduces the grinding depth but increases the width of laser irradiation zone on machined surface. Thus, a suitable laser spot radius can improve the material removal rate. These results indicate that it is possible to control and adjust the laser parameters according to laser moving speed, laser pulse intensity and laser spot radius, and it provides a potential technology to improve a surface integrity and a smoothness of ground surface.