Research on Noise Suppression in Double-Gate Nano-MOSFETs Based on Monte Carlo Simulation

摘要

Experimental observations and simulation results have shown that the dominant noise source of excess noise changes from thermal noise to shot noise with scaling of MOSFETs, and shot noise can be acted by Fermi and Coulomb suppression. But previous studies on shot noise suppression in nano-MOSFETs either ignored the suppression or just emphasized the existence of it but giving no more deep research. Based on Monte Carlo simulation, current noise in realistic nano-MOSFETs is simulated with considering Fermi effect and Coulomb interaction. Thus, shot noise suppression factor (Fano) considering Fermi effect and the Fano considering Fermi effect and Coulomb interaction are obtained. The variation of suppression factors with source-drain voltage, gate voltage, temperature and source-drain doping is investigated with theoretical analysis. The results we obtained are consistent with the experiments and the mesoscopic theoretically explain.