The production of oxygenated polycrystalline graphene by one-step ethanol-chemical vapor deposition

摘要

Large-area mono- and bilayer graphene films were synthesized on Cu foil (~1 in.~2) in about 1 min by a simple ethanol-chemical vapor deposition (CVD) technique. Raman spectroscopy and high resolution transmission electron microscopy revealed the synthesized graphene films to have polycrystalline structures with 2-5 nm individual crystallite size which is a function of temperature up to 1000 °C. X-ray photoelectron spectroscopy investigations showed about 3 at. carboxylic (COOH) functional groups were formed during growth. The field-effect transistor devices fabricated using polycrystalline graphene as conducting channel (Lc = 10 μm; Wc = 50 μm) demonstrated a p-type semiconducting behavior with high drive current and Dirac point at ~35 V. This simple one-step method of growing large area polycrystalline graphene films with semiconductor properties and easily func-tionalizable groups should assist in the realization of potential of polycrystalline graphene for nanoelectronics, sensors and energy storage devices.