Excimer laser doping technique was applied for p-type ZnO fabrication. The generation of oxygen vacancy by laser irradiation could be suppressed by high-pressure oxygen ambient. A ZnO diode was fabricated by using a laser doping technique to form a p-type ZnO layer on an n-type ZnO substrate. A zinc phosphide compound, used as a phosphorous source, was deposited on the ZnO wafer and subjected to excimer laser pulses. The current-voltage characteristics showed a diode characteristic between the phosphorous-doped p-layer and the n-type substrate. Moreover, light emission, with a bandedge component, was observed by forward current injection at 110K.
展开▼
