Nativehyphen;oxide stripehyphen;geometry In0.5(AlxGa1minus;x)0.5Phyphen;In0.5Ga0.5P heterostructure laser diodes

摘要

Data are presented demonstrating the formation of stable, devicehyphen;quality native oxides from high Al composition In0.5(AlxGa1minus;x)0.5P (xsim;0.9) via reaction with H2O vapor (in N2carrier gas) at elevated temperatures (ge;500thinsp;deg;C). The oxide exhibits excellent currenthyphen;blocking characteristics and is employed to fabricate continuous roomhyphen;temperature stripehyphen;geometry In0.5(AlxGa1minus;x)0.5Phyphen;In0.5Ga0.5P doublehyphen;heterostructure laser diodes.