Correlation of Defecthyphen;Impurity Interactions in GaP with Local Variations in Photoluminescence

摘要

A direct correlation between smallhyphen;scale spatial inhomogeneities in the photoluminescent efficiency of GaP LEC wafers and local variations in the density of shallow saucerhyphen;shaped chemical etch pits has been made. These variations are particularly evident in the vicinity of dislocations, suggesting that the dislocations act as a sink for the impurity or crystal defect responsible for the formation of saucer pits. In addition, largerhyphen;scale spatial variations in PL efficiency and saucerhyphen;pit density, believed to be related to the LEC crystalhyphen;growth procedure, are mirrored in the contrast obtained on Borrmann xhyphen;ray topographs.