An InGaP/GaAs composite channel FET for high power device application

摘要

We have examined an InGaP/GaAs composite-channel (C-C) MESFET in order to improve electron transport properties of InGaP. Compared to an InGaP single channel FET, the C-C FET has gained about 30 Imax and 15 gm, with almost the same breakdown voltage. We consider that these results are due to the effect of the electron transfer from GaAs to InGaP under the higher electric field. The C-C FET has also shown better power characteristics than those of InGaP single channel FET in output power, gain and efficiency.