Effects of Fluorine Implantation on 1/f Noise, Hot Carrier and NBTI Reliability of MOSFETs

摘要

The effects of fluorine implantation on flicker noise and reliability of NMOSFET and PMOSFETs were concurrently investigated. The flicker noise of an NMOSFET was decreased about 66 by fluorine implantation, and that of a PMOSET was decreased about 76. As indicated by the results, fluorine implantation is one of the methods that can be used to improve the noise characteristics of MOSFET devices. However, hot-carrier degradation was enhanced by fluorine implantation in NMOS-FETs, which can be related to the difference of molecular binding within the gate oxide. On the contrary, in case of PMOSFETs, NBTI life time was increased by fluorine implantation. Therefore, concurrent investigation of hot-carrier and NBTI reliability and flicker noise is necessary in developing MOSFETs for analog/digital mixed signal applications.