Liquid phase epitaxial In1minus;xGaxP1minus;zAszsol;GaAs1minus;yPyquaternary (LPE)hyphen;ternary (VPE) heterojunction lasers (xsim;0.70,zsim;0.01,ysim;0.40; lgr; 6300 Aring;, 77deg;K)

摘要

Laser operation (77deg;K) of LPE In1minus;xGaxP1minus;zAszsol; GaAs1minus;yPy(xsim;0.70,ysim;0.40,zsim;0.01) heterojunctions is demonstrated at lgr;6300 Aring;. The junctions are prepared by the LPE growth of laserhyphen;qualityphyphen;type In1minus;xGaxP1minus;zAszlayers onnhyphen;type VPE GaAs1minus;yPysubstrates. It is found that the problem of lattice matching In1minus;xGaxP on a GaAs1minus;yPysubstrate is eased if the ternary is rendered a quaternary by the incorporation of asmallamount of As in the LPE layer. During growth of the resultingphyphen;type quaternary layer, Zn diffuses into thenhyphen;type ternary substrate, yielding a thin compensated active region. Laser operation of these devices is obtained at significantly shorter wavelengths and lower thresholds than for comparable homojunctions.