Surfacehyphen;emitting GaAs/AlGaAs lasers with dryhyphen;etched 45deg; total reflection mirrors

摘要

Surfacehyphen;emitting GaAs/AlGaAs lasers with 45deg; total reflection mirrors have been successfully produced using a 45deg; tilted reactive ion beam etching technique. The ratio of surfacehyphen;emitted light output power to edgehyphen;emitted light output power was obtained at values as high as 77percnt;. The total reflection mirror was formed within 1deg; of the desired precise 45deg; angle. This type of surfacehyphen;emitting laser is promising for optoelectronic integrated circuits because of the simplicity of its structure and fabrication.