Enhanced localized degradation and anomalous emission spectra of Ga1minus;xAlxAs double heterostructure lasers induced by fabrication processes

摘要

Oxidehyphen;insulated stripe geometry double heterostructure lasers have been fabricated with and without a deep (1.3 mgr;m) zinc diffusion prior to alloyed contacting. The two processes were found to result first in emission spectra indicative of significant differences in the point defect complex densities in the device active regions, and second in distinctly different modes of dark effect degradation.