Oxygen gettering by graphite baffles during organometallic vapor phase epitaxial AlGaAs growth

摘要

The effects of baffles upon the incorporation of oxygen into organometallic vapor phase epitaxial AlxGa1minus;xAs have been investigated. Both graphite and SiC baffles have been studied. A simple model can be used to describe this effect as being dependent on the adsorption of trimethylaluminum onto the graphite, followed by reaction with oxygen to remove, or getter it from the gas stream.