Oxygen based electron cyclotron resonance etching of semiconducting homoepitaxial diamond films

摘要

Oxygenhyphen;based electron cyclotron resonance (ECR) plasma etching of boron doped homoepitaxial diamond films with no de bias has been achieved. The process was developed to the point where it can provide a uniform and reproducible etching procedure that yields smooth damagehyphen;free etched surfaces. Etch rates attained under these conditions of smooth damagehyphen;free etched surfaced were about 86 Aring;/min.