Low-frequency noise characteristics of In{sub}0.52Al{sub}0.48As/In{sub}0.60Ga{sub}0.40As metamorphic high electron mobility transistors

摘要

Low-frequency noise characteristics of In{sub}0.52Al{sub}0.48As/In{sub}0.60Ga{sub}0.40As metamorphic high electron mobility transistors (MM-HEMTs) grown on a GaAs substrate are investigated. Dependence of low-frequency noise spectral density of the MM-HEMT having two 0.5×50μm{sup}2 gates on temperature (200K - 400K) and gate and drain bias voltages is characterized for frequencies between 1 Hz to 53 kHz. The low-frequency input noise spectra of the MM-HEMT showed pure I/f noise characteristics, indicating that there exist no deep trap effects for the temperature and the frequency ranges investigated. The MM-HEMT showed a very low noise spectral density (Hooge parameter: 3.7×10{sup}(-5), trcqucncy exponent: ～1.0) and a very small transconductance frequency dispersion (△g{sub}m/g{sub}m < 3), which are comparable to the state-of-the-art InAlAs/InGaAs HEMTs grown on InP substrate. The results indicate a great potential of In{sub}0.52Al{sub}0.48As/In{sub}0.60Ga{sub}0.40As MM-HEMT grown on GaAs substrate for millimeter-wave circuit applications requiring low phase noise characteristics.