This paper is devoted to the investigation of galvanomagnetic effects (B less than or equal to 7 T) in electron-irradiated (T = 300 K, E = 6 MeV, Phi less than or equal to 5.7 x 10(17) cm(-2)) n- and p-Pb1-xSnxSe (x less than or equal to 0.03) alloys in the vicinity of the insulator-metal transition induced by pressure (P less than or equal to 18 kbar). In the frame of the two-band model, the dependence of the Hall constant on the magnetic field was calculated and found to be in a good agreement with experimental data. The main parameters of charge carriers in irradiated alloys were determined. It was shown that in the metal phase the hole concentration increases under pressure due to the motion of the energy bands at the Brillouin zone L-point and the flow of electrons from the valence band to the radiation defect band E-t1. By comparing theoretical and experimental dependences of hole concentration on pressure the parameters of the irradiation-induced defect band E-t1 were determined. References: 12
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