The relative dielectric constant egr;rof highhyphen;resistivity GaAs has been measured at 70.243 GHz as a function of temperature between 100 and 300deg;K. The measuring technique utilized a circularEfieldlpar;TEdeg;01rpar;mode reflectionhyphen;coefficient bridge. Estimated relative and absolute accuracies of the measurements are plusmn;0.2percnt; and plusmn;0.5percnt;, respectively. The results are found to fit the equation egr;r(T) equals; egr;r(0){1 plus; agr;T} where egr;r(0) equals; 12.73 plusmn;.07 and agr; equals; (1.2 plusmn; 0.1) times; 10minus;4. At room temperature (295deg;K) the relative permittivity is egr;requals; 13.18 plusmn;.07.
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