Crystalline defects in solid phase epitaxy Si films deposited at elevated temperatures

摘要

Si layers deposited on Auhyphen;Si substrates at temperatures above 380thinsp;deg;C are epitaxial with the underlying Si substrate. The layers analyzed contain a high density of microtwins which is the main factor resulting in dechanneling in the aligned RBS spectrum. The deposited layers also contain stacking faults and residual Au inclusions adjacent to primary twins.