The insulated-gate bipolar transistor (IGBT) was introduced into the family of power devices to overcome high onstate loss while maintaining the simple gate drive requirements of power metal-oxide semiconductor field-effect transistors (MOSFETs). IGBTs combine both bipolar and MOSFET structures and possesses the best features of both device types. Because the IGBT has a low-power gate drive requirement, a high-current density capability, and a high switching speed, it is preferable to other devices in many high power applications. A schematic representation of a single cell for an n-channel IGBT is shown in Figure l(a), and its simplified equivalent circuit is shown in (b) 1-3.
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