Flexible logic-gate using ferroelectric films

摘要

A new logic gate using ferroelectric film in which logic operation can be controlled by the ferroelectric polarization has been proposed and designed. It consists of neuron-CMOS-type inverter with a ferroelectric capacitor which controls a floating gate voltage. SPICE simulation shows that it can be act as a NAND gate when the negative programming signal was applied to the ferroelectric capacitor, while it can be switched to the NOR gate when the ferroelectric polarization is reversed by applying the positive programming voltage.