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首页> 外文期刊>電子情報通信学会技術研究報告. 電子デバイス. Electron Devices >The topographical selectivity in Pd-activated electroless copper deposition
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The topographical selectivity in Pd-activated electroless copper deposition

机译:The topographical selectivity in Pd-activated electroless copper deposition

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摘要

We have investigated on the palladium activated electroless copper deposition and we found that the topographical selectivity of copper film growth could be controlled by the process conditions of palladium activation and post-treatment. It results the bottom-up first filling of copper in vias or trenches without any lithography or masking processes. Our experimental results reveal the details of the process mechanism involved in topographically selective electroless copper deposition.

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