Minorityhyphen;carrier lifetime in GaAs thin films

摘要

Doublehyphen;heterostructure devices of type AlxGa1minus;xAs/GaAs have been fabricated in thin films grown by the cleavage of lateral epitaxial film for transfer process. The electron lifetime in thephyphen;type GaAs is measured by photoluminescence and found to be 32 ns at the 5times;1016cmminus;3doping level. This is the largest reported lifetime for a freestanding GaAs thin film.