Electron spin resonance studies on buried oxide siliconhyphen;onhyphen;insulator

摘要

Electron spin resonance is used to study defects in highhyphen;dose oxygenhyphen;ion implanted Si substrates. By this implantation, a crystalline Si/buried SiO2/crystalline Si structure is created. Two kinds of defect centers are found; one is assigned to the amorphous center, and the other, thePb0center, which has been observed at thermally grown SiO2/(111) Si interfaces. The observedPb0center appears to exist near precipitated SiO2/crystalline Si interfaces, rather than crystalline Si/buried SiO2interfaces. When annealed at 1150thinsp;deg;C, spin density decreases due to oxygen outdiffusion from the crystalline Si.