Low pressure metalorganic chemical vapor deposition of undoped and Fehyphen;doped InP on vicinal Si(001) and Si(111) is reported. For concentrations up to 8times;1016cmminus;3the incorporated Fe is found to be entirely electrically active. Semihyphen;insulating InP on Si(111) with a resistivity of 3times;107OHgr;thinsp;cm has been obtained. The resistivity increases strongly with decreasing defect density in the InP:Fe epitaxial layers. A reduction of the crystal defect density by one order of magnitude in InP/Si(111) as compared to InP/Si(001) almost suppresses the undesired effects of strong Si incorporation and parasitic conductance channels.
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