Nucleation and epitaxial growth of InAs on Sithinsp;(100) by ionhyphen;assisted deposition

摘要

The nucleation mechanism and crystalline perfection of InAs on Si(100) were found to depend strongly on the substrate bias voltageVsused to accelerate Ar ions to the growing film during triode ionhyphen;assisted deposition. Increasing theVsvalue used during the first sim;10 monolayers (ML) of growth from 15 to 30 V decreased the xhyphen;ray diffraction rocking curve full width at half maximum (FWHM) by a factor of sim;2. Further increases inVsyielded an increase in the FWHM. Reflection highhyphen;energy electron diffraction studies showed that the use ofVs=30 V promoted layerhyphen;byhyphen;layer nucleation. While threehyphen;dimensional islands formed at a critical coverage thgr;crof 2 ndash; 3 ML forVs=15 V, increasingVsto 30 V increased thgr;crto sim;10 ML. The fact thatVs=30 V both promoted layerhyphen;byhyphen;layer growth and decreased the FWHM suggests that defect generation is dependent upon the nucleation mechanism.