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首页> 外文期刊>Surface Science: A Journal Devoted to the Physics and Chemistry of Interfaces >Comment on 'Formation and atomic structures of double-layer steps on Si(100) surfaces studied by scanning tunneling microscope' by H.Q. Yang, C.X. Zhu, J.N. Gao, Z.Q. Xue, S.J. Pang Surface Science 429 (1999) L481-L485
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Comment on 'Formation and atomic structures of double-layer steps on Si(100) surfaces studied by scanning tunneling microscope' by H.Q. Yang, C.X. Zhu, J.N. Gao, Z.Q. Xue, S.J. Pang Surface Science 429 (1999) L481-L485

机译:Comment on "Formation and atomic structures of double-layer steps on Si(100) surfaces studied by scanning tunneling microscope" by H.Q. Yang, C.X. Zhu, J.N. Gao, Z.Q. Xue, S.J. Pang Surface Science 429 (1999) L481-L485

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