In this paper, several spiral inductors with various ground clearance structures and turns were investigated to achieve noise suppression up to the fourth harmonic (3.2 GHz) regime of DDR3-1600. Their performances were characterized in terms of their capability to effectively suppress simultaneous switching noise (SSN) in the frequency region of interest. For a wider noise suppression bandwidth, a spiral inductor with large ground clearance, which provides a high self resonance frequency (SRF) as well as high inductances, was implemented. The proposed spiral inductor exhibited good noise suppression characteristics in the frequency domain and achieved 50 voltage fluctuation reduction in the time domain, compared to the identical 4-turn spiral without pattern ground structure.
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