Leakyhyphen;mode buriedhyphen;heterostructure AlGaAs injection lasers

摘要

Leakyhyphen;mode buriedhyphen;heterostructure injection lasers are fabricated and operated successfully under pulse bias at room temperature. The lasers consist of a thin active layer confined by parallelnhyphen; andphyphen;AlxGa1minus;xAs layers with a high mole fraction of AlAs (x=0.4) and perpendicularpminus;hyphen;AlyGa1minus;yAs layers with a low mole fraction of AlAs (y=0.25). It is shown that most of the laser power can be coupled out into the lowhyphen;loss perpendicular layers and emitted from the end facets, resulting in highly collimated beams with a beam divergence of about 1deg;.