Low Temperature Poly Si TFTs with Metal Source and Drain

摘要

Poly Si TFTs with metal source and drain are described using Laser Annealing techniques. As the device structure with metal source/drain and its fabrication process of low temperature are simple. The process and the devices are expected for low-cost FPD application on glass as well as on flexible sheet not only for n-type TFTs but also for p-typed TFT circuits.