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Reconstruction of an InP(001) surface grown by metalorganic vapor phase epitaxy in atmospheric hydrogen environment

机译:Reconstruction of an InP(001) surface grown by metalorganic vapor phase epitaxy in atmospheric hydrogen environment

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摘要

A reconstructed surface of InP (001) substrate, grown by metalorganic vapor phase epitaxy under atmospheric hydrogen environment, is investigated by using grazing incident x-ray diffraction. Fractional-order diffractions of (n/2 m) were observed, showing the existence of a (2×1) domain on the surface. Calculations based on the P-dimer model suggest that there are P dimers whose bonding is parallel to the 110 direction and indium displacement in the second layer.

著录项

  • 来源
    《Applied physics letters》 |2000年第7期|996-998|共3页
  • 作者单位

    NTT Basic Research Laboratories, Wakamiya, Morinosato, Atsugi 243-0198, Japan;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 英语
  • 中图分类 应用物理学;
  • 关键词

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