Comparison of boron diffusion in Si and strained Si1minus;xGexepitaxial layers

摘要

We have investigated boron diffusion in Si and strained Si1minus;xGex,insitudoped, epitaxial layers. During inert ambient annealing at 860thinsp;deg;C, boron diffusion is observed to be slower in Si0.83Ge0.17than in Si for boron concentration levels between 5times;1016and 2.5times;1019cmminus;3. Computer simulations of the measured boron profiles for annealed samples indicate that the effective boron diffusivityDeffin Si0.83Ge0.17is approximately an order of magnitude lower than that in Si. This disparity is found to increase with increasing boron concentration.