We present results on roomhyphen;temperature photopumped lasing action in the blue region (sim;4650 Aring;) of the spectrum for double heterostructures with ZnSe active layers. The confining layers are ZnS0.06Se0.94, providing lattice match to the GaAs substrate. The roomhyphen;temperature lasing, observed under pulsed excitation, yields threshold pump intensity as low as 58 kW cmminus;2for an active layer thickness of 1500 Aring;.
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