An atomic force microscope has been used to pattern nanometer-scale features in III-V semiconductors by cutting through a thin surface layer of a different semiconductor, which is then used as an etch mask. Cuts up to 10 nm deep, which pass through 2-5 nm thick epilayers of both GaSb and InSb, have been formed. Lines as narrow as 20 and 2 nm deep have been made. Selective etchants and a 5 nm GaSb etch mask are used to transfer patterns into an InAs epilayer. The results are promising for applications requiring trench isolation, such as quantum wires and in-plane gated structures. (C) 1997 American Institute of Physics.
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