Enhanced conductivity in plasmahyphen;hydrogenated polysilicon films

摘要

Boronhyphen;doped polysilicon films have been passivated in a hydrogen plasma. In the range of concentration where carrier transport proceeds by thermionic emission over grain boundary barriers, conductivity enhancements as large as 103have been observed. The results are ascribed to the removal of danglinghyphen;bond carrier traps at grain boundaries by the formation of Sindash;H bonds.