Application of Scanning Electron Microscope to Measure the Thickness of Silicon Dioxide in Dielectrically Isolated Integrated Circuits

摘要

A method employing scanning electron microscope to measure the thickness of submerged silicon dioxide, partially visible at the surface, is proposed, as the existing methods are inadequate for such measurements. The method described is related to such submerged oxides (partially visible at the surface) as are encountered in dielectrically isolated integrated circuits. Details of the method are supplemented by micrographs. Contrast between silicon and silicon dioxide was enhanced using secondary emission supression technique. The emphasis is on the development of a simple and practical procedure that can be employed in a routine manner.