Structural modification of glassy chalcogenide semiconductors under the action of femtosecond laser radiation

摘要

This paper discusses the structural changes induced by laser radiation with wavelength lambda =800 nm, pulse width tau = 100 Is, and repetition rate f = 80 MHz in bulk samples of glassy semiconductors. As a result of this work, waveguide structures were created in As2S3 and 0.15(Ga2S3)-0.85(GeS2):Er3+C(Er3+) = 1.2 at glasses under various conditions of laser action (the recording method, the speed and number of scans). The structural changes induced by femtosecond laser radiation in a sample of As2S3 glass were investigated by Raman scattering (c) 2009 Optical Society of America.