Power amplifier using combined SiGe HBTs with and without selectively ion implanted collector

摘要

We present a novel two-stage SiGe hetero-bipolar transistor (HBT) power amplifier (PA) in which different collector doping structures were employed for the first and second stages. In order to achieve the high gain, the selectively ion implanted collector (SIC) structure was employed for the first stage HBT, while non-SIC structure was used for the second stage HBT to achieve a high breakdown voltage. At 1.95GHz, the total PAE of 31 and a gain of 28dB with an output power (Pout) of 26dBm were obtained while the adjacent channel power ratio (ACPR) was less than -38dBc.