We investigate fixed dopants in the presence of mobile point defects like foreign atoms or vacancies. A mobile defect entering the first Bohr radius R-B of a dopant will modulate the generation-recombination process. The times a defect walks inside or outside R-B are shown to be power-law distributed giving rise to 1/f(b) noise. The predicted Hooge coefficient alpha(def) depends on R-B, on the normalized fluctuations of charge carriers and on the number of charge carriers compared to lattice sites; our model suggests that the magnitude of 1/f noise can be decreased at will by increasing the ionization of dopants.
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