首页> 外文期刊>applied physics letters >Direct writing in Si with a scanning tunneling microscope
【24h】

Direct writing in Si with a scanning tunneling microscope

机译:Direct writing in Si with a scanning tunneling microscope

获取原文
       

摘要

Using the W tip of a scanning tunneling microscope, indentations with diameters of 2ndash;10 nm have been made directly in Sithinsp;(110) and Sithinsp;(001) surfaces. It is possible to create and image (lsquo;lsquo;write and readrsquo;rsquo;) arbitrary lines and bit patterns reproducibly with a single tip, without degrading its sharpness. The method does not require ideally flat surfaces and the indentations, when made in Si and kept in ultrahigh vacuum, are stable in time.

著录项

获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号