Fabrication of epitaxial Al/γ-Al{sub}2O{sub}3(111)/Si(111)/γ-Al{sub}2O{sub}3(111)/Si(111) heterostructures with smooth surfaces is presented in this study γ-Al{sub}2O{sub}3 layers were fabricated by mixed-source MBE and Si layers were fabricated by mini e-beam evaporator. Epitaxial γ-Al{sub}2O{sub}3 Si heterostructures was expected to be observed resonance tunneling phenomenon at room temperature, because we confirmed existence of enough ΔEc between γ-Al{sub}2O{sub}3 and Si. Resonant Tunneling Diode structures with double and triple barrier were fabricated using this γ-Al{sub}2O{sub}3/Si heterostructure. Negative Differential Resistance at room temperature was observed in the both structures. From these results, Si/γ-Al{sub}2O{sub}3/Si structure was a attractive candidate for resonance tunneling electron source.
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