High temperature ( 400 K) ferromagnetism, in III-V-based diluted magnetic semiconductor GaCrN grown by ECR molecular-beam epitaxy

摘要

A new III-V nitride-based diluted-magnetic semiconductor GaCrN has been successfully synthesized for the first time. GaCrN layers were grown on sapphire (0001) substrates by electron-cyclotron-resonance plasma-assisted molecular-beam epitaxy. X-ray diffraction measurement showed no existence of secondary phase in the GaCrN layers. They showed a ferromagnetic behavior with a Curie temperature higher than 400 K, and clear saturation and hysteresis were observed in the magnetization versus magnetic field curves at all measuring temperatures. (C) 2002 Elsevier Science Ltd. All rights reserved. References: 12