Actively mode-locked 1.3 and 1.55 μm InGaAsP diode lasers

摘要

Active mode-locking of uncoated InGaAsP diode lasers having an external diffraction grating cavity was investigated experimentally. A high frequency r.f. signal and short-duration electrical pulses were used to drive the lasers. The pulse duration was measured by an ultrafast streak camera. Pulses as short as 13 ps at 1.3μm and 29 ps at 1.55μm were generated at a repetition rate of 1 GHz. The reason for obtaining broader pulses from the 1.55μm laser which had the same structure as the 1.3μm diode laser is explai