Yttria (Y2O3) films have been grown on Sithinsp;(100) and Sithinsp;(111) substrates heated at 800thinsp;deg;C by vacuum evaporation. Xhyphen;ray diffraction and reflection highhyphen;energy electron diffraction observations reveal the heteroepitaxial growth of Y2O3films on Sithinsp;(100) and Sithinsp;(111) substrates. The (111) oriented Y2O3films are grown directly on Sithinsp;(111) substrates. The (100) oriented Y2O3films are grown on the thin (Y2O3)0.09(ZrO2)0.91layer predeposited on Sithinsp;(100) substrates instead of direct growth on Sithinsp;(100) substrates.
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