首页> 外文期刊>電子情報通信学会技術研究報告. 電子デバイス. Electron Devices >GaAs PHEMT/HBT high power amplifiers for mobile communication terminals
【24h】

GaAs PHEMT/HBT high power amplifiers for mobile communication terminals

机译:GaAs PHEMT/HBT high power amplifiers for mobile communication terminals

获取原文
获取原文并翻译 | 示例
       

摘要

Two high power amplifiers (HPAs) for mobile communication terminals are introduced. One is a three-stage GaAs PHEMT HPA module for W-CDMA cellular phones, which achieves high efficiency of 43.9 with low distortion of ACPR of -38 dBc. The HPA employs a HPF/LPF combined interstage matching circuit to achieve high efficiency and low distortion at the maximum output power level. The other is a constant voltage/constant current (CV/CC) parallel operation one-stage HBT HPA, which can realize low quiescent current of 17 mA and ACPR of less than -40 dBc in the output power range up to 26.8 dBm for W-CDMA cellular phones. By combining two HBTs having different base bias circuits (CV and CC), non-linearity at large back-off region can be canceled out.

著录项

获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号